Zhao Zuoming, Yadavalli Kameshwar, Hao Zhibiao, Wang Kang L
Device Research Laboratory, Electrical Engineering, University of California, Los Angeles, CA 90095, USA.
Nanotechnology. 2009 Jan 21;20(3):035304. doi: 10.1088/0957-4484/20/3/035304. Epub 2008 Dec 16.
Direct integration of III-V compound semiconductor (GaAs) on silicon (Si) substrates has been demonstrated using selective epitaxy on patterned substrates. GaAs was grown directly on patterned (001), (011), and (111) Si substrates covered with 60 nm thick thermally grown SiO(2). After growth, GaAs crystals with both dot and wire shapes show preferred {011} facets. GaAs grown on particular wire patterns which are parallel to {011} surfaces shows uniform nanowire structure. Transmission electron microscopy shows dislocation-free GaAs with low density of anti-phase domain boundaries along [111] directions. Metal-oxide-semiconductor structures with aluminum oxide as gate dielectric were fabricated using GaAs nanowires on Si. Capacitance-voltage measurements show clear inversion and accumulation.
通过在图案化衬底上进行选择性外延，已证明了在硅（Si）衬底上直接集成III-V族化合物半导体（GaAs）。GaAs直接生长在覆盖有60nm厚热生长SiO₂的图案化（001）、（011）和（111）Si衬底上。生长后，具有点和线形状的GaAs晶体显示出择优的{011}面。生长在与{011}表面平行的特定线图案上的GaAs显示出均匀的纳米线结构。透射电子显微镜显示，沿[111]方向具有低密度反相畴界的无位错GaAs。使用Si上的GaAs纳米线制造了以氧化铝为栅极电介质的金属氧化物半导体结构。电容-电压测量显示出清晰的反型和积累。
