Yang Kejian, Heinecke Dirk, Paajaste Jonna, Kölbl Christoph, Dekorsy Thomas, Suomalainen Soile, Guina Mircea
Department of Physics and Center of Applied Photonics, University of Konstanz, 78457 Konstanz, Germany.
Opt Express. 2013 Feb 25;21(4):4311-8. doi: 10.1364/OE.21.004311.
We have investigated passive mode-locking of Tm,Ho:YAG lasers with GaInAs- and GaSb-based semiconductor saturable absorber mirrors (SESAMs). With a GaInAs-based SESAM, stable dual-wavelength mode-locking operation was achieved at 2091 nm and 2097 nm, generating pulses with duration of 56.9 ps and a maximum output power of 285 mW. By using the GaSb-based SESAMs, we could generate mode-locked pulses as short as 21.3 ps at 2091 nm with a maximum output power of 63 mW. We attribute the shorter pulse duration obtained with the GaSb SESAMs to the ultrafast recovery time of the absorption and higher nonlinearity compared to standard GaInAs SESAMs.
我们研究了采用基于GaInAs和GaSb的半导体可饱和吸收镜（SESAM）对Tm,Ho:YAG激光器进行被动锁模。使用基于GaInAs的SESAM，在2091 nm和2097 nm实现了稳定的双波长锁模运转，产生了脉宽为56.9 ps且最大输出功率为285 mW的脉冲。通过使用基于GaSb的SESAM，我们能够在2091 nm产生脉宽短至21.3 ps且最大输出功率为63 mW的锁模脉冲。我们将使用GaSb SESAM获得更短脉冲持续时间归因于其吸收的超快恢复时间以及与标准GaInAs SESAM相比更高的非线性。
