Ding K, Hill M T, Liu Z C, Yin L J, van Veldhoven P J, Ning C Z
School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA.
Opt Express. 2013 Feb 25;21(4):4728-33. doi: 10.1364/OE.21.004728.
We demonstrate a continuous wave (CW) sub-wavelength metallic-cavity semiconductor laser with electrical injection at room temperature (RT). Our metal-cavity laser with a cavity volume of 0.67λ3 (λ = 1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength metallic-cavity laser. Such record performance provides convincing evidences of the feasibility of RT CW sub-wavelength metallic-cavity lasers, thus opening a wide range of practical possibilities of novel nanophotonic devices based on metal-semiconductor structures.
我们展示了一种在室温下通过电注入实现的连续波（CW）亚波长金属腔半导体激光器。我们的金属腔激光器，其腔体积为0.67λ³（λ = 1591 nm），在室温下的线宽为0.5 nm，对应的品质因数Q为3182，相比之下，腔Q为235，这是任何亚波长金属腔激光器在室温连续波工作的激射条件下的最高Q值。这种创纪录的性能为室温连续波亚波长金属腔激光器的可行性提供了令人信服的证据，从而为基于金属 - 半导体结构的新型纳米光子器件开辟了广泛的实际应用可能性。
