St Petersburg Academic University, 8/3 Khlopina Str, St Petersburg, 194021, Russia.
Univ Lyon, Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, F-69622, LYON, France.
Sci Rep. 2017 Aug 21;7(1):9014. doi: 10.1038/s41598-017-09245-7.
It was theoretically and experimentally demonstrated that in metal/semiconductor Tamm plasmon structures the probability of spontaneous emission can be increased despite losses in metal, and theoretical analysis of experimental results suggested that the enhancement could be as high as one order of magnitude. Tamm plasmon structure with quantum dots has been fabricated and the emission pattern has been measured. Electromagnetic modes of the structure have been analyzed and modification of spontaneous emission rates has been calculated showing a good agreement with experimentally observed emission pattern.
理论和实验证明，在金属/半导体 Tamm 等离子体结构中，尽管金属存在损耗，但自发发射的概率可以增加，并且对实验结果的理论分析表明，增强可以高达一个数量级。已经制造了具有量子点的 Tamm 等离子体结构，并测量了发射模式。分析了结构的电磁模式，并计算了自发发射率的修正，与实验观察到的发射模式吻合较好。
