Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371.
Nanoscale. 2013 May 7;5(9):3570-88. doi: 10.1039/c3nr34011b. Epub 2013 Mar 19.
Here we review the characteristics of "van der Waals epitaxy" (vdWE) as an alternative epitaxy mechanism that has been demonstrated as a viable method for circumventing the lattice matching requirements for epitaxial growth. Particular focus is given on the application of vdWE for nonplanar nanostructures. We highlight our works on the vdWE growth of nanowire arrays, tripods, and tetrapods from various semiconductors (ZnO, ZnTe, CdS, CdSe, CdSxSe1-x, CdTe, and PbS) on muscovite mica substrates, irrespective of the ensuing lattice mismatch. We then address the controllability of the synthesis and the growth mechanism of ZnO nanowires from catalyst-free vdWE in vapor transport growth. As exemplified herein with optical characterizations of ZnO and CdSe nanowires, we show that samples from vdWE may possess properties that are as excellent as those from conventional epitaxy. With our works, we aim to advocate vdWE as a prospective universal growth strategy for nonplanar epitaxial nanostructures.
在这里，我们回顾了“范德华外延”（vdWE）作为一种替代外延机制的特点，该机制已被证明是一种可行的方法，可以规避外延生长的晶格匹配要求。特别关注 vdWE 在非平面纳米结构中的应用。我们强调了我们在各种半导体（ZnO、ZnTe、CdS、CdSe、CdSxSe1-x、CdTe 和 PbS）在云母衬底上的纳米线阵列、三脚架和四脚架的 vdWE 生长方面的工作，而不管随之而来的晶格失配如何。然后，我们讨论了无催化剂 vdWE 在蒸汽传输生长中合成和 ZnO 纳米线生长机制的可控性。正如本文通过 ZnO 和 CdSe 纳米线的光学特性所证明的那样，我们表明，来自 vdWE 的样品可能具有与传统外延相当的优异性能。通过我们的工作，我们旨在倡导 vdWE 作为非平面外延纳米结构的一种有前途的通用生长策略。
