Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371.
Nanoscale. 2013 Aug 21;5(16):7242-9. doi: 10.1039/c3nr01984e. Epub 2013 Jun 7.
As an incommensurate epitaxy, van der Waals epitaxy allows defect-free crystals to grow on substrates even with a large lattice mismatch. Furthermore, van der Waals epitaxy is proposed as a universal platform where heteroepitaxy can be achieved irrespective of the nature of the overlayer material and the method of crystallization. Here we demonstrate van der Waals epitaxy in solution phase synthesis for seedless and catalyst-free growth of ZnO wire arrays on phlogopite mica at low temperature. A unique incommensurate interface is observed even with the incomplete initial wetting of ZnO onto the substrate. Interestingly, the imperfect contacting layer does not affect the crystalline and optical properties of other parts of the wires. In addition, we present patterned growth of a well-ordered array with hexagonal facets and in-plane alignment. We expect our seedless and catalyst-free solution phase van der Waals epitaxy synthesis to be widely applicable in other materials and structures.
作为一种不等价外延，范德华外延允许无缺陷晶体在衬底上生长，即使晶格失配很大。此外，范德华外延被提出作为一个通用平台，无论覆盖层材料的性质和结晶方法如何，都可以实现异质外延。在这里，我们在溶液相中演示了范德华外延，用于在低温下在云母上无种子和无催化剂生长 ZnO 线阵列。即使 ZnO 不完全初始润湿衬底，也观察到了独特的不等价界面。有趣的是，不完美的接触层不会影响线的其他部分的晶体和光学性质。此外，我们还展示了具有六方晶面和面内取向的有序图案化生长。我们期望我们的无种子和无催化剂的溶液相范德华外延合成能够广泛应用于其他材料和结构。
