Laboratory for Nanoelectronics, Department of Information Technology and Electrical Engineering, Eidgenoessische Technische Hochschule Zurich.
ACS Appl Mater Interfaces. 2013 Apr 24;5(8):2915-9. doi: 10.1021/am400326t. Epub 2013 Apr 3.
We demonstrate current-based, deep level transient spectroscopy (DLTS) on semiconductor nanocrystal solids to obtain quantitative information on deep-lying trap states, which play an important role in the electronic transport properties of these novel solids and impact optoelectronic device performance. Here, we apply this purely electrical measurement to an ethanedithiol-treated, PbS nanocrystal solid and find a deep trap with an activation energy of 0.40 eV and a density of NT = 1.7 × 10(17) cm(-3). We use these findings to draw and interpret band structure models to gain insight into charge transport in PbS nanocrystal solids and the operation of PbS nanocrystal-based solar cells.
我们展示了基于电流的深能级瞬态谱（DLTS）在半导体纳米晶固体上的应用，以获得关于深陷阱态的定量信息，这些陷阱态在这些新型固体的电子输运性质中起着重要作用，并影响光电设备的性能。在这里，我们将这种纯粹的电学测量应用于乙二硫醇处理的 PbS 纳米晶固体，并发现一个深陷阱，其激活能为 0.40eV，密度为 NT = 1.7×10(17)cm(-3)。我们利用这些发现来绘制和解释能带结构模型，以深入了解 PbS 纳米晶固体中的电荷输运以及基于 PbS 纳米晶的太阳能电池的工作原理。
