Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Department of Electronic Science and Technology, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China.
Micron. 2013 Jun;49:71-4. doi: 10.1016/j.micron.2013.02.011. Epub 2013 Mar 14.
In this study, we determine the electron tomography (ET) resolution for microns-thick specimens by experiment in the ultra-high voltage electron microscope. A tilt series of projection images of a tilted 8μm thick epoxy-resin film are first acquired. Tomographic reconstructions are then calculated and the resolution is evaluated with the Fourier shell correlation method. The ET resolution of 32nm is achieved under the condition of 2MV accelerating voltage. We also demonstrate that some high tilt angle projections may be little useful for improving the final ET resolution because of the corresponding poor image qualities. These results are helpful to understand the possibility and limitation of ET applications in microns-thick specimens.
在这项研究中，我们通过在超高电压电子显微镜中进行实验来确定微米厚样品的电子断层扫描（ET）分辨率。首先，获取倾斜 8μm 厚环氧树脂薄膜的倾斜投影图像系列。然后计算断层重建并使用傅里叶壳相关方法评估分辨率。在 2MV 加速电压的条件下，实现了 32nm 的 ET 分辨率。我们还表明，由于相应的图像质量较差，一些高倾斜角投影对于提高最终 ET 分辨率可能没有什么用处。这些结果有助于理解 ET 在微米厚样品中的应用的可能性和局限性。
