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等离子体结处的拉曼散射被导电分子桥短路。

Raman scattering at plasmonic junctions shorted by conductive molecular bridges.

机构信息

Physical Sciences Division, Pacific Northwest National Laboratory, Richland, Washington 99352, United States.

出版信息

Nano Lett. 2013 Apr 10;13(4):1858-61. doi: 10.1021/nl400733r. Epub 2013 Mar 29.

Abstract

Intensity spikes in Raman scattering, accompanied by switching between line spectra and band spectra, can be assigned to shorting the junction plasmon through molecular conductive bridges. This is demonstrated through Raman trajectories recorded at a plasmonic junction formed by a gold AFM tip in contact with a silver surface coated either with biphenyl-4,4'-dithiol or biphenyl-4-thiol. The fluctuations are absent in the monothiol. In effect, the making and breaking of chemical bonds is tracked.

摘要

拉曼散射中的强度尖峰,伴随着线谱和带谱之间的切换,可以归因于通过分子导电桥使结等离子体短路。这是通过在由金原子力显微镜针尖与涂有联苯-4,4'-二硫醇或联苯-4-硫醇的银表面形成的等离子体结上记录的拉曼轨迹来证明的。在单硫醇中没有波动。实际上,跟踪了化学键的形成和断裂。

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