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不同温度下制备的 SiGe/Si(001) 层中错位密度分布的不匹配。

The misfit dislocation density profile in graded SiGe/Si(001) layers prepared at different temperatures.

机构信息

Faculty of Mathematics and Physics, Department of Condensed Matter Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague, Czech Republic.

出版信息

J Phys Condens Matter. 2013 May 1;25(17):175802. doi: 10.1088/0953-8984/25/17/175802. Epub 2013 Apr 8.

DOI:10.1088/0953-8984/25/17/175802
PMID:23567796
Abstract

We present a generalization of the Dodson-Tsao kinematic model of misfit dislocation for graded SixGe1-x/Si(001) layers. The layers were prepared under different growing conditions (temperature). The misfit dislocation distribution has been determined by means of high-resolution x-ray scattering. Analysis of the reciprocal space maps was compared with the kinematic Dodson-Tsao model and the equilibrium Tersoff model.

摘要

我们提出了一种用于分级 SixGe1-x/Si(001) 层的错配位错的 Dodson-Tsao 运动学模型的推广。这些层是在不同的生长条件（温度）下制备的。通过高分辨率 X 射线散射确定了位错的分布。对倒易空间图谱的分析与运动学 Dodson-Tsao 模型和平衡 Tersoff 模型进行了比较。

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