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在高温退火 (Ga, Mn)As/GaAs 超晶格中形成二维限制的超顺磁 (Mn, Ga)As 纳米晶体。

Formation of two-dimensionally confined superparamagnetic (Mn, Ga)As nanocrystals in high-temperature annealed (Ga, Mn)As/GaAs superlattices.

机构信息

MAX-IV Laboratory, Lund University, Lund, Sweden.

出版信息

J Phys Condens Matter. 2013 May 15;25(19):196005. doi: 10.1088/0953-8984/25/19/196005. Epub 2013 Apr 19.

Abstract

The annealing-induced formation of (Mn, Ga)As nanocrystals in (Ga, Mn)As/GaAs superlattices was studied by x-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 Å thick (Ga, Mn)As layers separated by 25, 50 and 100 Å thick GaAs spacers were grown by molecular beam epitaxy at low temperature (250 °C), and then annealed at high temperatures of 400, 560 and 630 °C. The high-temperature annealing causes decomposition to a (Ga, Mn)As ternary alloy and the formation of (Mn, Ga)As nanocrystals inside the GaAs matrix. The nanocrystals are confined in the planes that were formerly occupied by (Ga, Mn)As layers for the up to 560 °C annealing and diffuse throughout the GaAs spacer layers at 630 °C annealing. The two-dimensionally confined nanocrystals exhibit a superparamagnetic behavior which becomes high-temperature ferromagnetism (~350 K) upon diffusion.

摘要

通过 X 射线衍射、透射电子显微镜和磁强计研究了在(Ga,Mn)As/GaAs 超晶格中退火诱导(Mn,Ga)As 纳米晶的形成。通过分子束外延在低温(250°C)下生长了具有 50Å 厚(Ga,Mn)As 层和 25、50 和 100Å 厚 GaAs 间隔层的超晶格结构,然后在 400、560 和 630°C 的高温下退火。高温退火导致(Ga,Mn)As 三元合金分解,并在 GaAs 基体中形成(Mn,Ga)As 纳米晶。纳米晶被限制在曾经被(Ga,Mn)As 层占据的平面内,对于高达 560°C 的退火,并且在 630°C 的退火时扩散到整个 GaAs 间隔层中。二维受限的纳米晶表现出超顺磁性行为,在扩散时变为高温铁磁性(~350K)。

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