Qi Dongfeng, Liu Hanhui, Gao Wei, Chen Songyan, Li Cheng, Lai Hongkai, Huang Wei, Li Jun
Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China.
Opt Express. 2013 Apr 22;21(8):9923-30. doi: 10.1364/OE.21.009923.
We describe the fabrication of nanostructures on SiGe film by KrF excimer laser with nanosecond pulse width, and find a more direct and clear relationship between the laser irradiation conditions and the nanoscale structures. Perfect annular nanostructures around scattering points on the SiGe film are firstly obtained after the irradiation of a KrF excimer pulse laser beam (100 mJ/cm(2)) at different incident angles. The different shapes of annular structures are related to different energy distributions due to the optical interference between the scattered light and the incident beam. As laser energy increases, a threshold of pulse energy (230 mJ/cm(2)) is found, above which a droplet-like morphology completely replacing the surface annular structures. And the disorder morphology is mainly caused by the thermal effect of the incident beam.
我们描述了利用脉宽为纳秒级的KrF准分子激光在SiGe薄膜上制备纳米结构的过程,并发现激光辐照条件与纳米级结构之间存在更直接、清晰的关系。在以不同入射角用KrF准分子脉冲激光束(100 mJ/cm²)辐照后,首次在SiGe薄膜上的散射点周围获得了完美的环形纳米结构。由于散射光与入射光束之间的光学干涉,环形结构的不同形状与不同的能量分布有关。随着激光能量增加,发现了一个脉冲能量阈值(230 mJ/cm²),高于该阈值时,液滴状形态完全取代了表面环形结构。而无序形态主要是由入射光束的热效应引起的。