Benemérita Universidad Autónoma de Puebla, Facultad de Ingeniería Química, Ciudad Universitaria, San Manuel, Puebla, Código Postal 72570, Mexico.
J Mol Graph Model. 2013 May;42:115-9. doi: 10.1016/j.jmgm.2013.03.007. Epub 2013 Apr 6.
Using the density functional theory (DFT) we study the structural and electronic properties of functionalized (5,5) chirality single wall beryllium oxide nanotubes (SW-BeONTs), i.e. armchair nanotubes. The nanotube surface and ends are functionalized by the hydroxyl (OH) functional group. Our calculations consider the Hamprecht-Cohen-Tozer-Handy functional in the generalized gradient approximation (HCTH-GGA) to deal with the exchange-correlation energies, and the base function with double polarization (DNP). The geometry optimization of both defects free and with point defects nanotubes is done applying the criterion of minimum energy. Six configurations are considered: The OH oriented toward the Be (on the surface and at the end), toward the O (on the surface and at the end) and placed at the nanotube ends. Simulation results show that the nanotube functionalization takes place at the nanotube ends with the BeO bond displaying hydrogen-like bridge bonds. Moreover the nanotube semiconductor behavior remains unchanged. The polarity is high (it shows a transition from covalent to ionic) favoring solvatation. On the other hand, the work function low value suggests this to be a good candidate for the device fabrication. When the nanotube contains surface point defects the work function is reduced which provides excellent possibilities for the use of this material in the electronic industry.
我们使用密度泛函理论(DFT)研究了功能化(5,5)手性单壁氧化铍纳米管(SW-BeONTs),即扶手椅纳米管的结构和电子性质。纳米管表面和末端通过羟基(OH)官能团功能化。我们的计算考虑了 Hamprecht-Cohen-Tozer-Handy 泛函在广义梯度近似(HCTH-GGA)中处理交换关联能,以及带有双极化(DNP)的基函数。无缺陷和带有点缺陷纳米管的几何优化都是应用最小能量准则进行的。考虑了六种配置:OH 朝向 Be(在表面和末端)、朝向 O(在表面和末端)以及位于纳米管末端。模拟结果表明,纳米管功能化发生在纳米管末端,其中 BeO 键呈现出类似氢键的桥键。此外,纳米管的半导体行为保持不变。极性较高(表现为从共价到离子的转变)有利于溶剂化。另一方面,低功函数值表明这是器件制造的良好候选材料。当纳米管包含表面点缺陷时,功函数降低,这为该材料在电子工业中的应用提供了极好的可能性。