Ma Zhongyuan, Liu Guanyuan, Jiang Xiaofan, Xia Guoying, Yan Minyi, Li Wei, Chen Kunji, Xu Ling, Xu Jun, Feng Duan
National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China.
J Nanosci Nanotechnol. 2013 Feb;13(2):997-1000. doi: 10.1166/jnn.2013.6076.
Nanocrystalline (nc)-Si/SiO2 multistacked floating gate have been prepared by electron beam evaporation of SiO(x) and SiO2 followed by thermal annealing. HRXTEM reveals that the density of multiply stacked nc-Si quantum dots reaches 9.1 x 10(11) cm(-2) with size of 2-3 nm. The periodicity effect of nc-Si/SiO2 multilayers on the charge storage characteristics of nc-Si floating gate is investigated carefully by using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements at room temperature. It is found the charge storage ability enhances obviously with the periodicity of the multiply stacked nc-Si layer increasing from 2 to 9. The up limit of the thickness for multistacked nc-Si/SiO2 layer is less than 100 nm, which is close to the mean free path of electron in multistacked nc-Si. Charge diffusion among the multistacked nc-Si quantum dots is used to explain the charge storage and retention characteristics.
通过对SiO(x)和SiO2进行电子束蒸发并随后进行热退火，制备了纳米晶(nc)-Si/SiO2多层叠浮栅。高分辨率透射电子显微镜(HRXTEM)显示，多层堆叠的nc-Si量子点密度达到9.1×10(11) cm(-2)，尺寸为2-3nm。通过在室温下使用电容-电压(C-V)和电导-电压(G-V)测量，仔细研究了nc-Si/SiO2多层膜对nc-Si浮栅电荷存储特性的周期性影响。发现随着多层堆叠的nc-Si层的周期从2增加到9，电荷存储能力明显增强。多层堆叠的nc-Si/SiO2层的厚度上限小于100nm，这接近于多层堆叠的nc-Si中电子的平均自由程。利用多层堆叠的nc-Si量子点之间的电荷扩散来解释电荷存储和保持特性。
