Department of Chemical Engineering, National Taiwan University, Taipei, 10617 Taiwan.
ACS Appl Mater Interfaces. 2013 Jun 12;5(11):4921-9. doi: 10.1021/am4006594. Epub 2013 May 16.
Resistance switching memory devices with the configuration of poly(ethylene naphthalate)(PEN)/Al/polyimide (PI) blend/Al are reported. The active layers of the PI blend films were prepared from different compositions of poly[4,4'-diamino-4″-methyltriphenylamine-hexafluoroisopropylidenediphthalimide] (PI(AMTPA)) and polycyclic aromatic compounds (coronene or N,N-bis[4-(2-octyldodecyloxy)phenyl]-3,4,9,10-perylenetetracarboxylic diimide (PDI-DO)). The additives of large π-conjugated polycyclic compounds can stabilize the charge transfer complex induced by the applied electric field. Thus, the memory device characteristic changes from the volatile to nonvolatile behavior of flash and write-once-read-many times (WORM) as the additive contents increase in both blend systems. The main differences between these two blend systems are the threshold voltage values and the additive content to change the memory behavior. Due to the stronger accepting ability and higher electron affinity of PDI-DO than those of coronene, the PI(AMTPA):PDI-DO blend based memory devices show a smaller threshold voltage and change the memory behavior in a smaller additive content. Besides, the memory devices fabricated on a flexible PEN substrate exhibit an excellent durability upon the bending conditions. These tunable memory performances of the developed PI/polycyclic aromatic compound blends are advantageous for future advanced memory device applications.
报道了一种具有聚萘二甲酸乙二醇酯（PEN）/Al/聚酰亚胺（PI）共混物/Al 结构的电阻式存储器件。PI 共混膜的活性层由不同组成的聚[4,4'-二氨基-4″-甲基三苯胺-六氟异丙基二邻苯二甲酰亚胺]（PI（AMTPA））和多环芳烃（并五苯或 N,N-双[4-（2-辛基十二烷氧基）苯基]-3,4,9,10-苝四羧酸二酰亚胺（PDI-DO））制备而成。大π共轭多环化合物的添加剂可以稳定由外加电场诱导的电荷转移复合物。因此，随着添加剂含量在两个共混体系中的增加，存储器件的特性从易挥发的闪存行为和一次写入多次读取（WORM）行为转变为非易失性行为。这两个共混体系的主要区别在于阈值电压值和改变存储行为的添加剂含量。由于 PDI-DO 的接受能力和电子亲和力均强于并五苯，因此基于 PI（AMTPA）：PDI-DO 共混物的存储器件具有较小的阈值电压，并在较小的添加剂含量下改变存储行为。此外，在柔性 PEN 基底上制造的存储器件在弯曲条件下表现出优异的耐久性。这些开发的 PI/多环芳烃混合物的可调谐存储性能有利于未来先进的存储设备应用。
