Yu An-Dih, Tung Wei-Yao, Chiu Yu-Cheng, Chueh Chu-Chen, Liou Guey-Sheng, Chen Wen-Chang
Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan.
Macromol Rapid Commun. 2014 Jun;35(11):1039-45. doi: 10.1002/marc.201400089. Epub 2014 Apr 4.
The electrical memory characteristics of the n-channel organic field-effect transistors (OFETs) employing diverse polyimide (PI) electrets are reported. The synthesized PIs comprise identical electron donor and three different building blocks with gradually increasing electron-accepting ability. The distinct charge-transfer capabilities of these PIs result in varied type of memory behaviors from the write-one-read-many (WORM) to flash type. Finally, a prominent flexible WORM-type transistor memory is demonstrated and shows not only promising write-many-read-many (WMRM) multilevel data storage but also excellent mechanical and retention stability.
报道了采用不同聚酰亚胺（PI）驻极体的n沟道有机场效应晶体管（OFET）的电存储特性。合成的聚酰亚胺包含相同的电子给体和三种具有逐渐增强的电子接受能力的不同结构单元。这些聚酰亚胺不同的电荷转移能力导致了从一次写入多次读取（WORM）到闪存类型等不同类型的存储行为。最后，展示了一种出色的柔性WORM型晶体管存储器，它不仅具有有望实现的多次写入多次读取（WMRM）多级数据存储能力，还具有出色的机械稳定性和保持稳定性。
