Key Laboratory for Green Chemical Technology of Ministry of Education, School of Chemical Engineering and Technology, Tianjin University, Tianjin, China.
Phys Chem Chem Phys. 2013 Jun 28;15(24):9549-61. doi: 10.1039/c3cp51476e. Epub 2013 May 7.
This paper describes an investigation into the general trend in electronic properties of anatase TiO2 photocatalysts co-doped with transition metals and nitrogen employing first-principles density functional theory. Fourteen different transition metals (M), including Sc, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, and Cd, have been considered. The characteristic band structures of the co-doping systems involving the transition metal series are presented. Our results indicate that the absorption edges of TiO2 are shifted to the visible-light region upon introduction of dopants, due to the reduced conduction band minimum (CBM) and the formation of impurity energy levels (IELs) in the band gap. These IELs are primarily formed from (a) the anti-bonding orbitals of the M-O (M indicates the doped transition metal) bonds, (b) the unsaturated nonbonding d orbitals of the doped transition metal (mainly d(xy), d(yz), and d(xz)), and (c) the Ti-O bonding/Ti-N anti-bonding orbitals of the bond next to the doped transition metal. When the valence d electrons of the doped metal are between 3 and 7, all three types of IELs appear in the band gap of the (M, N) co-doped systems. For systems doped with a metal of more than 7 valence electrons, only types (a) and (c) of IELs as well as the unoccupied pz state of N are observed. Based on our analysis, we propose that the co-doping systems such as (V, N), (Cr, N), and (Mn, N), which have the IELs with a significant bandwidth, are of great potential as candidates for photovoltaic applications in the visible light range.
本文采用第一性原理密度泛函理论研究了在过渡金属和氮共掺杂条件下锐钛矿 TiO2 光催化剂电子特性的总体趋势。共考虑了十四种不同的过渡金属(M),包括 Sc、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Y、Zr、Nb、Mo 和 Cd。给出了包含过渡金属系列的共掺杂体系的特征能带结构。结果表明,由于导带底(CBM)的降低和带隙中杂质能级(IEL)的形成,掺杂后 TiO2 的吸收边缘被转移到可见光区域。这些 IEL 主要由以下几种情况形成:(a)M-O(M 表示掺杂的过渡金属)键的反键轨道,(b)掺杂过渡金属的不饱和非键 d 轨道(主要是 d(xy)、d(yz)和 d(xz)),以及(c)紧邻掺杂过渡金属的键的 Ti-O 键/Ti-N 反键轨道。当掺杂金属的价 d 电子数在 3 到 7 之间时,这三种类型的 IEL 都出现在(M,N)共掺杂体系的带隙中。对于价 d 电子数超过 7 的金属掺杂体系,只观察到 IEL 的类型(a)和(c)以及 N 的未占据 pz 态。根据我们的分析,我们提出了(V,N)、(Cr,N)和(Mn,N)等共掺杂体系具有较大带宽的 IEL,很有潜力作为可见光范围内光伏应用的候选材料。