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在 III-V 半导体芯片上实现室温下的直接贝尔态生成。

Direct Bell states generation on a III-V semiconductor chip at room temperature.

机构信息

Laboratoire Matériaux et Phénomènes Quantiques, CNRS-UMR 7162, Université Paris Diderot, Sorbonne Paris Cité, Case courrier 7021, 75205 Paris Cedex 13, France.

出版信息

Phys Rev Lett. 2013 Apr 19;110(16):160502. doi: 10.1103/PhysRevLett.110.160502. Epub 2013 Apr 18.

DOI:10.1103/PhysRevLett.110.160502
PMID:23679588
Abstract

We demonstrate the direct generation of polarization-entangled photon pairs at room temperature and telecom wavelength in an AlGaAs semiconductor waveguide. The source is based on spontaneous parametric down-conversion with a counterpropagating phase-matching scheme. The quality of the two-photon state is assessed by the reconstruction of the density matrix giving a raw fidelity to a Bell state of 0.83; a theoretical model, taking into account the experimental parameters, provides ways to understand and control the amount of entanglement. Its compatibility with electrical injection, together with the high versatility of the generated two-photon state, make this source an attractive candidate for completely integrated quantum photonics devices.

摘要

我们在室温下和电信波长的 AlGaAs 半导体波导中演示了偏振纠缠光子对的直接产生。该光源基于反向传播的相位匹配方案的自发参量下转换。通过密度矩阵的重构评估双光子态的质量,给出了一个贝尔态的原始保真度为 0.83;一个考虑实验参数的理论模型提供了理解和控制纠缠量的方法。它与电注入的兼容性,以及产生的双光子态的高度通用性,使这个光源成为完全集成的量子光子学器件的有吸引力的候选者。

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Direct generation of entangled photon pairs in nonlinear optical waveguides.在非线性光波导中直接产生纠缠光子对。
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Integrated sources of photon quantum states based on nonlinear optics.
基于非线性光学的光子量子态集成源。
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