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由近邻效应诱导的库珀对的分数拓扑绝缘子。

Fractional topological insulators of Cooper pairs induced by the proximity effect.

机构信息

School of Physics, Astronomy and Computational Sciences, George Mason University, Fairfax, Virginia 22030, USA.

出版信息

Phys Rev Lett. 2013 Apr 26;110(17):176804. doi: 10.1103/PhysRevLett.110.176804. Epub 2013 Apr 24.

Abstract

Certain insulating materials with strong spin-orbit interaction can conduct currents along their edges or surfaces owing to the nontrivial topological properties of their electronic band structure. This phenomenon is somewhat similar to the integer quantum Hall effect of electrons in strong magnetic fields. Topological insulators analogous to the fractional quantum Hall effect are also possible, but have not yet been observed in any material. Here we show that a quantum well made from a topological band insulator such as Bi2Se3 or Bi2Te3, placed in contact with a superconductor, can be used to realize a two-dimensional topological state with macroscopic many-body quantum entanglement whose excitations carry fractional amounts of an electron's charge and spin. This fractional topological insulator is a "pseudogap" state of induced spinful p-wave Cooper pairs, a new strongly correlated quantum phase with possible applications to spintronic devices and quantum computing.

摘要

某些具有强自旋轨道相互作用的绝缘材料可以在其边缘或表面传导电流,这是由于其电子能带结构的非平凡拓扑性质。这一现象与强磁场中电子的整数量子霍尔效应有些相似。类似分数量子霍尔效应的拓扑绝缘体也是可能的,但尚未在任何材料中观察到。在这里,我们展示了一种由拓扑带绝缘体(如 Bi2Se3 或 Bi2Te3)制成的量子阱,与超导体接触,可以用来实现具有宏观多体量子纠缠的二维拓扑态,其激发携带电子电荷和自旋的分数。这种分数拓扑绝缘体是感应自旋 p 波库珀对的“赝能隙”态,是一种新的强关联量子相,可能应用于自旋电子器件和量子计算。

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