Lim Chul, Oh Ji Young, Koo Jae Bon, Park Chan Woo, Jung Soon-Won, Na Bock Soon, Chu Hye Yong
J Nanosci Nanotechnol. 2014 Nov;14(11):8665-70. doi: 10.1166/jnn.2014.10002.
Flexible oxide thin-film transistors (Oxide-TFTs) have emerged as next generation transistors because of their applicability in electronic device. In particular, the major driving force behind solution-processed zinc oxide film research is its prospective use in printing for electronics. A low-temperature process to improve the performance of solution-processed n-channel ZnO thin-film transistors (TFTs) fabricated via spin-coating and inkjet-printing is introduced here. ZnO nanoparticles were synthesized using a facile sonochemical method that was slightly modified based on a previously reported method. The influence of the annealing atmosphere on both nanoparticle-based TFT devices fabricated via spin-coating and those created via inkjet printing was investigated. For the inkjet-printed TFTs, the characteristics were improved significantly at an annealing temperature of 150 degrees C. The field effect mobility, V(th), and the on/off current ratios were 3.03 cm2/Vs, -3.3 V, and 10(4), respectively. These results indicate that annealing at 150 degrees C 1 h is sufficient to obtain a mobility (μ(sat)) as high as 3.03 cm2/Vs. Also, the active layer of the solution-based ZnO nanoparticles allowed the production of high-performance TFTs for low-cost, large-area electronics and flexible devices.
柔性氧化物薄膜晶体管（Oxide-TFTs）因其在电子设备中的适用性而成为下一代晶体管。特别是，溶液处理氧化锌薄膜研究背后的主要驱动力在于其在电子印刷方面的潜在用途。本文介绍了一种低温工艺，用于提高通过旋涂和喷墨印刷制备的溶液处理n沟道ZnO薄膜晶体管（TFTs）的性能。采用一种简便的声化学方法合成了ZnO纳米颗粒，该方法在先前报道的方法基础上进行了轻微修改。研究了退火气氛对通过旋涂制备的基于纳米颗粒的TFT器件以及通过喷墨印刷制备的器件的影响。对于喷墨印刷的TFTs，在150℃退火温度下其特性得到显著改善。场效应迁移率、V(th)和开/关电流比分别为3.03 cm2/Vs、-3.3 V和10(4)。这些结果表明，在150℃退火1小时足以获得高达3.03 cm2/Vs的迁移率（μ(sat)）。此外，基于溶液的ZnO纳米颗粒的有源层使得能够生产用于低成本、大面积电子器件和柔性器件的高性能TFTs。
