Chimie des Interactions Plasma Surface (ChIPS), CIRMAP, Université de Mons, 23 Place du Parc, B-7000 Mons, Belgium.
Nanotechnology. 2013 Jul 5;24(26):265603. doi: 10.1088/0957-4484/24/26/265603. Epub 2013 Jun 3.
The growth of single-crystal CuO nanowires by thermal annealing of copper thin films in air is studied. We show that the density, length, and diameter of the nanowires can be controlled by tuning the morphology and structure of the copper thin films deposited by DC magnetron sputtering. After identifying the optimal conditions for the growth of CuO nanowires, chemical bath deposition is employed to coat the CuO nanowires with CdS in order to form p-n nanojunction arrays. As revealed by high-resolution TEM analysis, the thickness of the polycrystalline CdS shell increases when decreasing the diameter of the CuO core for a given time of CdS deposition. Near-edge x-ray absorption fine-structure spectroscopy combined with transmission x-ray microscopy allows the chemical analysis of isolated nanowires. The absence of modification in the spectra at the Cu L and O K edges after the deposition of CdS on the CuO nanowires indicates that neither Cd nor S diffuse into the CuO phase. We further demonstrate that the core-shell nanowires exhibit the I-V characteristic of a resistor instead of a diode. The electrical behavior of the device was found to be photosensitive, since increasing the incident light intensity induces an increase in the collected electrical current.
通过在空气中对铜薄膜进行热退火来生长单晶氧化铜纳米线。我们表明,通过直流磁控溅射沉积来调整铜薄膜的形态和结构,可以控制纳米线的密度、长度和直径。在确定了生长 CuO 纳米线的最佳条件后,采用化学浴沉积法在 CuO 纳米线上包覆 CdS,以形成 p-n 纳米结阵列。高分辨率 TEM 分析表明,对于给定的 CdS 沉积时间,当 CuO 核的直径减小时,多晶 CdS 壳的厚度增加。近边 X 射线吸收精细结构光谱结合透射 X 射线显微镜允许对孤立的纳米线进行化学分析。在 CdS 沉积在 CuO 纳米线之后,Cu L 和 O K 边缘的光谱没有发生变化,这表明 Cd 和 S 都没有扩散到 CuO 相中。我们进一步证明,核壳纳米线表现出电阻器的 I-V 特性,而不是二极管。该器件的电行为表现出光敏性,因为增加入射光强度会导致收集电流增加。