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通过选择性湿法刻蚀在光子晶体中实现自对准的活性量子纳米结构。

Self-aligned active quantum nanostructures in photonic crystals via selective wet-chemical etching.

机构信息

Department of Applied Physics, California Institute of Technology, Pasadena, CA 91125, USA.

出版信息

Nanotechnology. 2013 Jul 5;24(26):265201. doi: 10.1088/0957-4484/24/26/265201. Epub 2013 Jun 3.

Abstract

We propose a method of forming quantum-size emitters within a pre-defined photonic crystal in a self-aligned fashion through controlled removal of quantum well layers via selective wet-chemical etching. To demonstrate the effectiveness of our method, we take the example of a two-dimensional photonic crystal slab containing multiple quantum wells at its center. We successfully fabricate vertically stacked quantum nanostructures (or quantum dots) well aligned with respect to the photonic crystal backbone. Micro-photoluminescence measurements performed at 78 K reveal that the radiative transition energy blue-shifts when the lateral dimension reaches less than 100 nm, which is compared with a simple model based on the 'particle-in-a-box' picture. The proposed method may find a broad range of applications in photonics and quantum optics, where the coupling between an emitter and an optical mode needs to be maximized.

摘要

我们提出了一种通过选择性湿法刻蚀有控制地去除量子阱层,在预先定义的光子晶体中自对准形成量子尺寸发射器的方法。为了证明我们方法的有效性,我们以二维光子晶体平板为例,其中心包含多个量子阱。我们成功地制造了与光子晶体主干垂直堆叠的量子纳米结构(或量子点),并且对齐良好。在 78 K 下进行的微光致发光测量表明,当横向尺寸达到小于 100 nm 时,辐射跃迁能量发生蓝移,这与基于“盒中粒子”图像的简单模型进行了比较。所提出的方法可能在光子学和量子光学中有广泛的应用,其中发射器与光学模式之间的耦合需要最大化。

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