用于1.55μm电信波段单光子源的InGaAsP/InP纳米腔
InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band.
作者信息
Song Hai-Zhi, Hadi Mukhtar, Zheng Yanzhen, Shen Bizhou, Zhang Lei, Ren Zhilei, Gao Ruoyao, Wang Zhiming M
机构信息
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Section 2-4, Jianshebei Road, Chengdu, 610054, Sichuan, China.
School of Optoelectronic Information, University of Electronic Science and Technology of China, Section 2-4, Jianshebei Road, Chengdu, 610054, Sichuan, China.
出版信息
Nanoscale Res Lett. 2017 Dec;12(1):128. doi: 10.1186/s11671-017-1898-y. Epub 2017 Feb 20.
A new structure of 1.55-μm pillar cavity is proposed. Consisting of InP-air-aperture and InGaAsP layers, this cavity can be fabricated by using a monolithic process, which was difficult for previous 1.55-μm pillar cavities. Owing to the air apertures and tapered distributed Bragg reflectors, such a pillar cavity with nanometer-scaled diameters can give a quality factor of 10-10 at 1.55 μm. Capable of weakly and strongly coupling a single quantum dot with an optical mode, this nanocavity could be a prospective candidate for quantum-dot single-photon sources at 1.55-μm telecommunication band.
提出了一种新型的1.55微米柱形腔结构。该腔由InP-空气孔和InGaAsP层组成，可通过单片工艺制造，这对于以前的1.55微米柱形腔来说是困难的。由于空气孔和锥形分布布拉格反射器，这种直径为纳米级的柱形腔在1.55微米处可提供10-10的品质因数。这种纳米腔能够将单个量子点与光学模式进行弱耦合和强耦合，有望成为1.55微米电信波段量子点单光子源的候选者。
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