Zhang Haosu, Zhu Jun, Zhu Zhendong, Jin Yuanhao, Li Qunqing, Jin Guofan
State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instruments and Mechanology, Tsinghua University, Beijing 100084, China.
Opt Express. 2013 Jun 3;21(11):13492-501. doi: 10.1364/OE.21.013492.
A multilayered metallic M-shaped nano-grating is proposed to enhance the internal quantum efficiency, light extraction efficiency and surface-plasmon (SP) extraction efficiency of the gallium nitride-based light emitting diodes. This structure is fabricated by the low-cost nano-imprint lithography. The suitable grating based on quasi-symmetrical-waveguide structure has a high transmission in the visible region. The properties of SP mode and the Purcell effect in this type of LED is investigated. The experimental results demonstrate that its peak photoluminescence intensity of the proposed LED is over 10 times greater than that from a naked GaN-LED without any nanostructure.
提出了一种多层金属M形纳米光栅，以提高氮化镓基发光二极管的内量子效率、光提取效率和表面等离子体（SP）提取效率。这种结构是通过低成本的纳米压印光刻技术制造的。基于准对称波导结构的合适光栅在可见光区域具有高透射率。研究了这种类型发光二极管中SP模式的特性和珀塞尔效应。实验结果表明，所提出的发光二极管的峰值光致发光强度比没有任何纳米结构的裸氮化镓发光二极管的峰值光致发光强度大10倍以上。
