State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics & Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China.
Nanoscale Res Lett. 2014 Jan 6;9(1):7. doi: 10.1186/1556-276X-9-7.
The output power of the light from GaN-based light-emitting diodes (LEDs) was enhanced by fabricating gold (Au) nanoparticles on the surface of p-GaN. Quasi-aligned Au nanoparticle arrays were prepared by depositing Au thin film on an aligned suspended carbon nanotube thin film surface and then putting the Au-CNT system on the surface of p-GaN and thermally annealing the sample. The size and position of the Au nanoparticles were confined by the carbon nanotube framework, and no other additional residual Au was distributed on the surface of the p-GaN substrate. The output power of the light from the LEDs with Au nanoparticles was enhanced by 55.3% for an injected current of 100 mA with the electrical property unchanged compared with the conventional planar LEDs. The enhancement may originate from the surface plasmon effect and scattering effect of the Au nanoparticles.
通过在 p-GaN 表面制造金（Au）纳米粒子，提高了基于 GaN 的发光二极管（LED）的光输出功率。通过在取向的悬浮碳纳米管薄膜表面沉积 Au 薄膜，然后将 Au-CNT 系统放在 p-GaN 表面并进行热退火，制备了准取向的 Au 纳米粒子阵列。Au 纳米粒子的尺寸和位置受到碳纳米管框架的限制，并且在 p-GaN 衬底的表面上没有分布其他额外的残余 Au。与传统的平面 LED 相比，对于注入电流为 100 mA 的电流，具有 Au 纳米粒子的 LED 的光输出功率提高了 55.3%，而其电学性能保持不变。这种增强可能源于 Au 纳米粒子的表面等离子体效应和散射效应。
