Jaafar W M N Wan, Snyder J E, Min Gao
School of Engineering, Cardiff University, Cardiff, Wales CF24 3AA, United Kingdom.
Rev Sci Instrum. 2013 May;84(5):054903. doi: 10.1063/1.4805016.
An apparatus for measuring the Seebeck coefficient (α) and electrical resistivity (ρ) was designed to operate under an infrared microscope. A unique feature of this apparatus is its capability of measuring α and ρ of small-dimension (sub-millimeter) samples without the need for microfabrication. An essential part of this apparatus is a four-probe assembly that has one heated probe, which combines the hot probe technique with the Van der Pauw method for "simultaneous" measurements of the Seebeck coefficient and electrical resistivity. The repeatability of the apparatus was investigated over a temperature range of 40 °C-100 °C using a nickel plate as a standard reference. The results show that the apparatus has an uncertainty of ±4.9% for Seebeck coefficient and ±5.0% for electrical resistivity. The standard deviation of the apparatus against a nickel reference sample is -2.43 μVK(-1) (-12.5%) for the Seebeck coefficient and -0.4 μΩ cm (-4.6%) for the electrical resistivity, respectively.
一种用于测量塞贝克系数（α）和电阻率（ρ）的装置被设计用于在红外显微镜下运行。该装置的一个独特之处在于其能够测量小尺寸（亚毫米）样品的α和ρ，而无需进行微加工。该装置的一个关键部分是四探针组件，它有一个加热探针，该加热探针将热探针技术与范德堡方法相结合，用于“同时”测量塞贝克系数和电阻率。使用镍板作为标准参考，在40°C至100°C的温度范围内研究了该装置的重复性。结果表明，该装置的塞贝克系数不确定度为±4.9%，电阻率不确定度为±5.0%。相对于镍参考样品，该装置的塞贝克系数标准偏差为-2.43 μVK(-1)（-12.5%），电阻率标准偏差为-0.4 μΩ cm（-4.6%）。
