He Xu, Yang Junyou, Jiang Qinghui, Luo Yubo, Zhang Dan, Zhou Zhiwei, Ren Yangyang, Li Xin, Xin Jiwu, Hou Jingdi
State Key Laboratory of Materials Processing and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
Rev Sci Instrum. 2016 Dec;87(12):124901. doi: 10.1063/1.4969056.
A new method has been proposed and verified to measure the Seebeck coefficient and electrical resistivity of a sample in the paper. Different from the conventional method for Seebeck coefficient and resistivity measurement, the new method adopts a four-point configuration to measure both the Seebeck coefficient and resistivity. It can well identify the inhomogeneity of the sample by simply comparing the four Seebeck coefficients of different probe combinations, and it is more accurate and appropriate to take the average value of the four Seebeck coefficients as the measured result of the Seebeck coefficient of the sample than that measured by the two-point method. Furthermore, the four-point configuration makes it also very convenient to measure the resistivity by using the Van der Pauw method. The validity of this method has been verified with both the constantan alloy and p-type BiTe semiconductor samples, and the measurement results are in good agreement with those obtained by commercial available equipment.
本文提出并验证了一种测量样品塞贝克系数和电阻率的新方法。与传统的塞贝克系数和电阻率测量方法不同，新方法采用四点配置来测量塞贝克系数和电阻率。通过简单比较不同探针组合的四个塞贝克系数，它可以很好地识别样品的不均匀性，并且将四个塞贝克系数的平均值作为样品塞贝克系数的测量结果比两点法更准确、更合适。此外，四点配置使得使用范德堡方法测量电阻率也非常方便。该方法已通过康铜合金和p型BiTe半导体样品验证其有效性，测量结果与商用设备获得的结果吻合良好。
