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倾斜还是不倾斜:在低能电子衍射中纠正倾斜样品表面引起的扭曲。

To tilt or not to tilt: correction of the distortion caused by inclined sample surfaces in low-energy electron diffraction.

机构信息

Friedrich Schiller University Jena, Institute of Solid State Physics, Helmholtzweg 5, 07743 Jena, Germany.

出版信息

Ultramicroscopy. 2013 Oct;133:35-40. doi: 10.1016/j.ultramic.2013.04.005. Epub 2013 Apr 29.

DOI:10.1016/j.ultramic.2013.04.005
PMID:23770540
Abstract

Low-energy electron diffraction (LEED) is a widely employed technique for the structural characterization of crystalline surfaces and epitaxial adsorbates. For technical reasons the accessible reciprocal space is limited at a given primary electron energy E. This limitation may be overcome by sweeping E to observe higher diffraction orders decisively enhancing the quantitative examination. Yet, in many cases, such as molecular films with rather large unit cells, the adsorbate reflexes become less pronounced at energies high enough to observe substrate reflexes. One possibility to overcome this problem is an intentional inclination of the sample surface during the measurement at the expense of the quantitative interpretability of then severely distorted diffraction patterns. Here, we introduce a correction method for the axially symmetric distortion in LEED images of tilted samples. We provide experimental confirmation for micro-channel plate LEED and spot-profile analysis LEED instruments using the (7×7) reconstructed surface of a Si(111) single crystal as a reference sample. Finally, we demonstrate that the correction of this distortion considerably improves the quantitative analysis of diffraction patterns of adsorbates since substrate and adsorbate reflexes can be evaluated simultaneously. As an illustrative example we have chosen an epitaxial monolayer of 3,4,9,10-perylenetetracarboxylic dianhydride on Ag(111) that is known to form a commensurate superstructure.

摘要

低能电子衍射 (LEED) 是一种广泛应用于晶体表面和外延吸附物结构表征的技术。由于技术原因,在给定的初级电子能量 E 下,可访问的倒易空间是有限的。通过扫掠 E 来观察更高的衍射级次,可以显著增强定量检测,从而克服这种限制。然而,在许多情况下,例如具有较大单元的分子膜,在足以观察到衬底反射的能量下,吸附物反射变得不那么明显。克服这个问题的一种可能性是在测量过程中有意倾斜样品表面,这会牺牲衍射图案的定量可解释性。在这里,我们引入了一种用于倾斜样品的 LEED 图像中轴对称变形的校正方法。我们使用 Si(111)单晶的 (7×7)重构表面作为参考样品,对微通道板 LEED 和点分布分析 LEED 仪器进行了实验验证。最后,我们证明这种变形的校正可以显著改善吸附物衍射图案的定量分析,因为可以同时评估衬底和吸附物反射。作为一个说明性的例子,我们选择了在 Ag(111)上外延的 3,4,9,10-苝四羧酸二酐单层,它已知形成了一个共格超结构。

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