L-NESS and Dept. of Materials Science, Università degli Studi di Milano-Bicocca, via Cozzi 53, Milan, Italy.
Adv Mater. 2013 Aug 27;25(32):4408-12. doi: 10.1002/adma.201300550. Epub 2013 Jun 21.
An innovative strategy in dislocation analysis, based on comparison between continuous and tessellated film, demonstrates that vertical dislocations, extending straight up to the surface, easily dominate in thick Ge layers on Si(001) substrates. The complete elimination of dislocations is achieved by growing self-aligned and self-limited Ge microcrystals with fully faceted growth fronts, as demonstrated by AFM extensive etch-pit counts.
一种基于连续和镶嵌薄膜比较的位错分析创新策略表明，在 Si(001)衬底上的厚 Ge 层中，垂直位错很容易占据主导地位，这些位错笔直地延伸到表面。通过生长具有完全成面生长前沿的自对准和自限制 Ge 微晶体，可以完全消除位错，这一点通过 AFM 广泛的蚀坑计数得到了证明。
