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飞秒电子在离子液体/金属电极界面的溶剂化。

Femtosecond electron solvation at the ionic liquid/metal electrode interface.

机构信息

Department of Chemistry, University of California at Berkeley, Berkeley, California, USA.

出版信息

J Am Chem Soc. 2013 Jul 24;135(29):10646-53. doi: 10.1021/ja3108593. Epub 2013 Jul 10.

Abstract

Electron solvation is examined at the interface of a room temperature ionic liquid (RTIL) and an Ag(111) electrode. Femtosecond two-photon photoemission spectroscopy is used to inject an electron into an ultrathin film of RTIL 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide (BmpyrNTf2). While much of current literature highlights slower nanosecond solvation mechanisms in bulk ionic liquids, we observe only a femtosecond response, supporting morphology dependent and interface specific electron solvation mechanisms. The injected excess electron is found to reside in an electron affinity level residing near the metal surface. Population of this state decays back to the metal with a time constant of 400 ± 150 fs. Electron solvation is measured as a dynamic decrease in the energy with a time constant of 350 ± 150 fs. We observe two distinct temperature regimes, with a critical temperature near 250 K. The low temperature regime is characterized by a higher work function of 4.41 eV, while the high temperature regime is characterized by a lower work function of 4.19 eV. The total reorganizational energy of solvation changes above and below the critical temperature. In the high temperature regime, the electron affinity level solvates by 540 meV at 350 K, and below the critical temperature, solvation decreases to 200 meV at 130 K. This study will provide valuable insight to interface specific solvation of room temperature ionic liquids.

摘要

在室温离子液体 (RTIL) 和 Ag(111) 电极的界面处研究了电子溶剂化作用。飞秒双光子光电子能谱用于将电子注入 RTIL 1-丁基-1-甲基吡咯烷双(三氟甲基磺酰基)亚胺(BmpyrNTf2)的超薄薄膜中。虽然目前的文献大多强调了在 bulk 离子液体中较慢的纳秒溶剂化机制,但我们只观察到飞秒响应,支持形态依赖和界面特异性的电子溶剂化机制。发现注入的过剩电子位于靠近金属表面的电子亲和能能级中。该状态的布居数以 400 ± 150 fs 的时间常数退回到金属。电子溶剂化被测量为能量的动态减小,具有 350 ± 150 fs 的时间常数。我们观察到两个不同的温度范围,临界温度约为 250 K。低温范围的特征是较高的功函数为 4.41 eV,而高温范围的特征是较低的功函数为 4.19 eV。溶剂化的总重组能在临界温度以上和以下发生变化。在高温范围内,电子亲和能能级在 350 K 时溶剂化 540 meV,低于临界温度时,溶剂化在 130 K 时降至 200 meV。这项研究将为室温离子液体的界面特异性溶剂化提供有价值的见解。

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