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基于蘸笔的直接书写导电银点。

Dip-pen-based direct writing of conducting silver dots.

机构信息

Institute of Inorganic Chemistry, RWTH Aachen University, 52074 Aachen, Germany.

出版信息

J Colloid Interface Sci. 2013 Sep 15;406:256-62. doi: 10.1016/j.jcis.2013.05.047. Epub 2013 Jun 6.

DOI:10.1016/j.jcis.2013.05.047
PMID:23796451
Abstract

Direct fabrication of micro- and nanoscale metallic structures is advantageous for many applications. Here, we use dip-pen lithography with silver(I) carboxylate [AgO2C(CH2OCH2)3H] in diethylene glycol as precursor ink for the generation of conducting metal structures. After annealing the written dots, solid silver structures are generated. We investigate the influence of several parameters such as substrate functionalization and ink composition on the pattern formation. We found that a substrate coating with perfluorinated silane is necessary, if diethylene glycol will be used as ink carrier. By variation in ink concentration and ink carrier composition, structures with diameters ranging from ~20 μm to ~2 μm and with metal fractions ranging from ~5% to ~80% were fabricated. After gold enhancement of the written patterns, resistivities in the range of 4×10(-5) Ωm on the structures were determined. The ink system introduced here appears promising for the direct fabrication of various metal or metal oxide patterns.

摘要

直接制造微纳尺度的金属结构在许多应用中具有优势。在这里,我们使用银(I)羧酸盐[AgO2C(CH2OCH2)3H]在二乙二醇中的 dip-pen 光刻作为前体墨水,用于生成导电金属结构。在对写入的点进行退火处理后,会生成固态银结构。我们研究了几个参数的影响,例如基底功能化和墨水组成对图案形成的影响。我们发现,如果将二乙二醇用作墨水载体,则需要对基底进行全氟硅烷涂层处理。通过改变墨水浓度和墨水载体组成,可以制造出直径从20μm到2μm、金属比例从5%到80%的结构。对所写图案进行金增强后,确定了结构的电阻在 4×10(-5)Ωm 范围内。本文介绍的墨水体系有望用于直接制造各种金属或金属氧化物图案。

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