Cu2ZnGeS4 和 Cu2ZnGeSe4 单晶纳米线阵列的合成及光电性能。

Synthesis and photoelectric properties of Cu2ZnGeS4 and Cu2ZnGeSe4 single-crystalline nanowire arrays.

机构信息

Department of Chemistry, University of Science and Technology of China, Hefei 230026, PR China.

出版信息

Langmuir. 2013 Jul 9;29(27):8713-7. doi: 10.1021/la401531r. Epub 2013 Jun 26.

Abstract

Cu2ZnGeS4 (CZGS) and Cu2ZnGeSe4 (CZGSe) single crystalline nanowire arrays have been prepared via a convenient one-step nanoconfined solvothermal approach. The porous anodic aluminum oxide was used as a morphology directing template by offering nanospace in the AAO pores for confined solvothermal reaction. The structure, morphology, composition, and optical absorption properties of the as-prepared samples were characterized using X-ray powder diffraction, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy, and a UV-vis spectrophotometer. The CZGS and CZGSe films are found to have obvious photoelectric response, indicating their potential in the application of photovoltaic devices.

摘要

通过简便的一步纳米受限溶剂热法制备了 Cu2ZnGeS4（CZGS）和 Cu2ZnGeSe4（CZGSe）单晶纳米线阵列。多孔阳极氧化铝用作形态导向模板，通过在 AAO 孔中提供纳米空间来进行受限溶剂热反应。使用 X 射线粉末衍射、透射电子显微镜、能量色散 X 射线光谱仪、扫描电子显微镜和紫外可见分光光度计对制备的样品的结构、形态、组成和光学吸收性质进行了表征。发现 CZGS 和 CZGSe 薄膜具有明显的光电响应，表明它们在光伏器件中的应用潜力。