Department of Chemistry and Chemical Biology, 12 Oxford Street, Harvard University, Cambridge, Massachusetts 02138-2902, United States.
J Am Chem Soc. 2013 Jul 17;135(28):10492-502. doi: 10.1021/ja403656w. Epub 2013 Jul 3.
Solar-driven electrochemical transformations of small molecules, such as water splitting and CO2 reduction, pertinent to modern energy challenges, require the assistance of catalysts preferably deposited on conducting or semiconducting surfaces. Understanding mechanisms and identifying the factors that control the functioning of such systems are required for rational catalyst optimization and improved performance. A methodology is proposed, in the framework of rotating disk electrode voltammetry, to analyze the current responses expected in the case of a semigeneral reaction scheme involving a proton-coupled catalytic reaction associated with proton-coupled electron hopping through the film as rate controlling factors in the case where there is no limitation by substrate diffusion. The predictions concern the current density vs overpotential (Tafel) plots and their dependence on buffer concentration (including absence of buffer), film thickness and rotation rate. The Tafel plots may have a variety of slopes (e.g., F/RT ln 10, F/2RT ln 10, 0) that may even coexist within the overpotential range of a single plot. We show that an optimal film thickness exists beyond which the activity of the film plateaus. Application to water oxidation by films of a cobalt-based oxidic catalyst provides a successful test of the applicability of the proposed methodology, which also provides further insight into the mechanism by which these cobalt-based films catalyze the oxidation of water. The exact nature of the kinetic and thermodynamic characteristics that have been derived from the analysis is discussed as well as their use in catalyst benchmarking.
小分子的太阳能驱动电化学转化,如水解和 CO2 还原,与现代能源挑战有关,需要在导电或半导体表面上优先沉积的催化剂的帮助。为了进行合理的催化剂优化和提高性能,需要了解这些系统的作用机制并确定控制其功能的因素。本文提出了一种在旋转圆盘电极伏安法框架内的方法,用于分析在涉及质子耦合催化反应的半通用反应方案的情况下预期的电流响应,其中质子耦合电子通过膜跳跃与质子耦合反应一起作为控制速率的因素在不存在基质扩散限制的情况下。预测涉及电流密度与过电势(Tafel)图及其对缓冲液浓度(包括无缓冲液)、膜厚度和旋转速率的依赖性。Tafel 图可能具有多种斜率(例如,F/RTln10、F/2RTln10、0),甚至可能在单个图的过电势范围内共存。我们表明,在超过一定的膜厚度后,膜的活性会趋于稳定。用基于钴的氧化催化剂的薄膜对水氧化的应用成功地检验了所提出方法的适用性,这也进一步深入了解了这些基于钴的薄膜催化水氧化的机制。还讨论了从分析中得出的动力学和热力学特征的精确性质及其在催化剂基准测试中的应用。