Chen Lei, Li Ping, Wen Yumei, Zhu Yong
Research Center of Sensors and Instruments, College of Optoelectronic Engineering, Chongqing University, Chongqing City 400044, People's Republic of China.
Rev Sci Instrum. 2013 Jun;84(6):066101. doi: 10.1063/1.4808322.
The self-bias magnetoelectric (ME) sensor is designed, fabricated, and characterized for detecting weak ac magnetic-field. The two different magnetostrictive materials produce the gradient of magnetization, resulting in an internal magnetic field and a strong ME response. At zero-biased dc magnetic field, a low-frequency ME voltage coefficient (dVME∕dHac) of 22.11 mV∕Oe is achieved, which is 17.69 times higher than that of the previous magnets∕0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) sensor. Furthermore, the ME voltage coefficient reaches 2.73 V∕Oe at resonance. The induced ME voltage shows an excellent linear relationship to ac magnetic field when field amplitude varies from ~10(-7) Oe to 1 Oe.
设计、制作并表征了用于检测弱交流磁场的自偏置磁电（ME）传感器。两种不同的磁致伸缩材料产生磁化强度梯度，从而产生内部磁场和强烈的磁电响应。在零偏置直流磁场下，实现了22.11 mV∕Oe的低频磁电电压系数（dVME∕dHac），这比之前的磁体∕0.7Pb（Mg1/3Nb2/3）O3 - 0.3PbTiO3（PMN - PT）传感器高17.69倍。此外，在共振时磁电电压系数达到2.73 V∕Oe。当磁场幅度在~10（-7）Oe至1 Oe范围内变化时，感应磁电电压与交流磁场呈现出良好的线性关系。
