注意：采用端接磁电异质结构的自偏置磁场传感器。

Note: self-biased magnetic field sensor using end-bonding magnetoelectric heterostructure.

作者信息

Zhao Yaoxia, Lu Caijiang

机构信息

School of Computer Science and Control Engineering, North University of China, Taiyuan 030051, China.

Guizhou Electric Power Test and Research Institute, China Southern Power Grid, Guiyang 550002, China.

出版信息

Rev Sci Instrum. 2015 Mar;86(3):036101. doi: 10.1063/1.4915091.

DOI:10.1063/1.4915091

PMID:25832285

Abstract

A high sensitivity magnetic field sensor based on magnetoelectric (ME) coupling is presented. The ME sensor FeCuNbSiB/Nickel-PZT-FeCuNbSiB/Nickel is made by bonding magnetization-graded magnetostrictive materials FeCuNbSiB/Nickel at the free ends of the piezoelectric Pb(Zr1-x,Tix)O3 (PZT) plate. Experiments indicate that the proposed sensor has a zero-bias field sensitivity of 14.7 V/Oe at resonance, which is ∼41.6 times larger than that of previous FeCuNbSiB-PZT-FeCuNbSiB. Furthermore, without external biased field, it can detect dc magnetic field changes as small as ∼9 nT near the resonant frequency. This proposed ME sensor provides new pathways to reducing or even eliminating the need of bias fields for ME sensors.

摘要

本文提出了一种基于磁电（ME）耦合的高灵敏度磁场传感器。该ME传感器FeCuNbSiB/镍 - 锆钛酸铅（PZT）-FeCuNbSiB/镍是通过在压电Pb（Zr1-x，Tix）O3（PZT）板的自由端粘结磁化梯度磁致伸缩材料FeCuNbSiB/镍制成的。实验表明，所提出的传感器在共振时的零偏置场灵敏度为14.7 V/Oe，这比之前的FeCuNbSiB-PZT-FeCuNbSiB传感器大约高41.6倍。此外，在没有外部偏置场的情况下，它在共振频率附近能够检测到小至约9 nT的直流磁场变化。这种所提出的ME传感器为减少甚至消除ME传感器对偏置场的需求提供了新途径。