Valente Virgilio, Demosthenous Andreas, Bayford Richard
Department of Electrical and Electronic Engineering, University College of London, London WC1E 7JE, UK.
IEEE Trans Biomed Circuits Syst. 2012 Jun;6(3):197-207. doi: 10.1109/TBCAS.2011.2171036.
A significant problem with clinical deep brain stimulation (DBS) is the high variability of its efficacy and the frequency of side effects, related to the spreading of current beyond the anatomical target area. This is the result of the lack of control that current DBS systems offer on the shaping of the electric potential distribution around the electrode. This paper presents a stimulator ASIC with a tripolar current-steering output stage, aiming at achieving more selectivity and field shaping than current DBS systems. The ASIC was fabricated in a 0.35-μ m CMOS technology occupying a core area of 0.71 mm(2). It consists of three current sourcing/sinking channels. It is capable of generating square and exponential-decay biphasic current pulses with five different time constants up to 28 ms and delivering up to 1.85 mA of cathodic current, in steps of 4 μA, from a 12 V power supply. Field shaping was validated by mapping the potential distribution when injecting current pulses through a multicontact DBS electrode in saline.
临床深部脑刺激(DBS)的一个重大问题是其疗效的高度变异性和副作用的发生率,这与电流扩散到解剖目标区域之外有关。这是当前DBS系统在电极周围电势分布整形方面缺乏控制的结果。本文介绍了一种具有三极电流控制输出级的刺激器专用集成电路(ASIC),旨在实现比当前DBS系统更高的选择性和场整形。该ASIC采用0.35μm CMOS技术制造,核心面积为0.71mm²。它由三个电流源/电流吸收通道组成。它能够产生具有五个不同时间常数(最长可达28ms)的方波和指数衰减双相电流脉冲,并从12V电源以4μA的步长提供高达1.85mA的阴极电流。通过在盐水中通过多触点DBS电极注入电流脉冲时绘制电势分布来验证场整形。