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一种用于可植入设备能量收集的高效低压CMOS整流器。

A high-efficiency low-voltage CMOS rectifier for harvesting energy in implantable devices.

作者信息

Hashemi S Saeid, Sawan Mohamad, Savaria Yvon

机构信息

Electrical Engineering Department, Polystim Neurotechnologies Laboratory, Ecole Polytechnique de Montreal, Montreal, QC H3C 3A7, Canada.

出版信息

IEEE Trans Biomed Circuits Syst. 2012 Aug;6(4):326-35. doi: 10.1109/TBCAS.2011.2177267.

Abstract

We present, in this paper, a new full-wave CMOS rectifier dedicated for wirelessly-powered low-voltage biomedical implants. It uses bootstrapped capacitors to reduce the effective threshold voltage of selected MOS switches. It achieves a significant increase in its overall power efficiency and low voltage-drop. Therefore, the rectifier is good for applications with low-voltage power supplies and large load current. The rectifier topology does not require complex circuit design. The highest voltages available in the circuit are used to drive the gates of selected transistors in order to reduce leakage current and to lower their channel on-resistance, while having high transconductance. The proposed rectifier was fabricated using the standard TSMC 0.18 μm CMOS process. When connected to a sinusoidal source of 3.3 V peak amplitude, it allows improving the overall power efficiency by 11% compared to the best recently published results given by a gate cross-coupled-based structure.

摘要

在本文中,我们展示了一种新型全波CMOS整流器,专为无线供电的低压生物医学植入物而设计。它采用自举电容来降低所选MOS开关的有效阈值电压。其整体功率效率显著提高,电压降较低。因此,该整流器适用于低压电源和大负载电流的应用。该整流器拓扑不需要复杂的电路设计。电路中可用的最高电压用于驱动所选晶体管的栅极,以减少漏电流并降低其沟道导通电阻,同时具有高跨导。所提出的整流器采用标准的台积电0.18μm CMOS工艺制造。当连接到峰值幅度为3.3V的正弦源时,与最近发表的基于栅极交叉耦合结构的最佳结果相比,它可将整体功率效率提高11%。

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