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结构域 IV 电压感受器的运动对于钠离子通道的快速失活既是充分的也是限速的。

Domain IV voltage-sensor movement is both sufficient and rate limiting for fast inactivation in sodium channels.

机构信息

Department of Neuroscience, University of Wisconsin, Madison, Madison, WI 53706, USA.

出版信息

J Gen Physiol. 2013 Aug;142(2):101-12. doi: 10.1085/jgp.201310998. Epub 2013 Jul 15.

Abstract

Voltage-gated sodium channels are critical for the generation and propagation of electrical signals in most excitable cells. Activation of Na(+) channels initiates an action potential, and fast inactivation facilitates repolarization of the membrane by the outward K(+) current. Fast inactivation is also the main determinant of the refractory period between successive electrical impulses. Although the voltage sensor of domain IV (DIV) has been implicated in fast inactivation, it remains unclear whether the activation of DIV alone is sufficient for fast inactivation to occur. Here, we functionally neutralize each specific voltage sensor by mutating several critical arginines in the S4 segment to glutamines. We assess the individual role of each voltage-sensing domain in the voltage dependence and kinetics of fast inactivation upon its specific inhibition. We show that movement of the DIV voltage sensor is the rate-limiting step for both development and recovery from fast inactivation. Our data suggest that activation of the DIV voltage sensor alone is sufficient for fast inactivation to occur, and that activation of DIV before channel opening is the molecular mechanism for closed-state inactivation. We propose a kinetic model of sodium channel gating that can account for our major findings over a wide voltage range by postulating that DIV movement is both necessary and sufficient for fast inactivation.

摘要

电压门控钠离子通道对于大多数可兴奋细胞中电信号的产生和传播至关重要。Na(+)通道的激活引发动作电位,而快速失活通过外向 K(+)电流促进膜的复极化。快速失活也是连续电脉冲之间不应期的主要决定因素。尽管 IV 域(DIV)的电压传感器已被牵连到快速失活中,但仍不清楚 DIV 的单独激活是否足以发生快速失活。在这里,我们通过将 S4 片段中的几个关键精氨酸突变为谷氨酰胺,在功能上使每个特定的电压传感器失活。我们评估了每个电压感应域在其特异性抑制时对快速失活的电压依赖性和动力学的个体作用。我们表明,DIV 电压传感器的运动是快速失活的发展和恢复的限速步骤。我们的数据表明,仅 DIV 电压传感器的激活足以发生快速失活,并且在通道打开之前 DIV 的激活是关闭状态失活的分子机制。我们提出了一种钠通道门控的动力学模型,该模型通过假设 DIV 运动对于快速失活既是必需的又是充分的,从而可以在很宽的电压范围内解释我们的主要发现。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/35dc/3727307/fe07e3b53a47/JGP_201310998_Fig1.jpg

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