Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States.
ACS Appl Mater Interfaces. 2013 Aug 14;5(15):6968-74. doi: 10.1021/am402450w. Epub 2013 Aug 2.
Mg100-xVx (x = 0 to 15) thin films capped with Pd were prepared by electron beam codeposition and studied for their hydrogenation/dehydrogenation kinetics and cycling properties at 140 °C under hydrogenation pressures of 0.1 MPa. It has been found that the Mg100-xVx thin films show significantly higher reversible hydrogen-storage capacity and faster kinetics in comparison with a pure Mg thin film; for instance, the maximum hydrogen absorption (3.7% mass fraction hydrogen) can be obtained in the fifth cycle for Mg90V10 in less than 5 min. The addition of V clearly plays a favorable role in improving the reversible hydrogen-storage capacity of an Mg film; however, with increasing hydrogenation/dehydrogenation cycles the hydrogen-storage capacity gradually deteriorates. To explore the origin of the effect of V on the improved hydrogenation of an Mg thin film, in this work we focused on studying the structural variations of the Mg90V10 thin film before and after hydrogenation at different stages of cycling; the films were investigated by X-ray diffraction as well as scanning and transmission electron microscopy. We concluded that (1) early in the absorption/desorption cycling the as-deposited structure of percolating layers of nanocrystalline V throughout a Mg matrix is preserved; (2) the percolating V layers envelope fine Mg grains and act as (a) dispersers that isolate small Mg grains, (b) fast diffusers of hydrogen, and (c) hydrogen catalysts at the Mg/V interface to form MgH2; and (3) with progressive cycling, the continuous layers of V aggregate to spherical nanoparticles, which interrupts the continuity of fast hydrogen diffusion through V.
Mg100-xVx(x=0 至 15)薄膜通过电子束共沉积制备,并在 140°C 下、0.1 MPa 的氢气压力下研究其氢化/脱氢动力学和循环性能。结果发现,与纯 Mg 薄膜相比,Mg100-xVx 薄膜具有更高的可逆储氢容量和更快的动力学;例如,在第五个循环中,Mg90V10 在不到 5 分钟内即可吸收 3.7%(质量分数)的氢气。V 的添加显然有利于提高 Mg 膜的可逆储氢容量;然而,随着氢化/脱氢循环次数的增加,储氢容量逐渐恶化。为了探究 V 对改善 Mg 薄膜氢化性能的影响的起源,本工作重点研究了在循环不同阶段氢化前后 Mg90V10 薄膜的结构变化;使用 X 射线衍射以及扫描和透射电子显微镜对薄膜进行了研究。我们得出结论:(1)在吸收/解吸循环的早期,在 Mg 基体中渗透纳米晶 V 的层状结构得以保留;(2)渗透的 V 层包围细小的 Mg 颗粒,并作为(a)分散剂将小的 Mg 颗粒隔离,(b)氢的快速扩散剂,以及(c)Mg/V 界面处的氢气催化剂以形成 MgH2;(3)随着循环的进行,V 的连续层聚集为球形纳米颗粒,这中断了 V 中快速氢扩散的连续性。