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铁电体中自极化反转的 Flexoelectric 效应及其对 BiFeO(3) 薄膜电子功能特性的影响。

Flexoelectric effect in the reversal of self-polarization and associated changes in the electronic functional properties of BiFeO(3) thin films.

机构信息

Center for Functional Interfaces of Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 151-747, Korea, Department of Physics and Astronomy, Seoul National University, Seoul, 151-747, Korea.

出版信息

Adv Mater. 2013 Oct 18;25(39):5643-9. doi: 10.1002/adma.201301601. Epub 2013 Jul 30.

Abstract

Flexoelectricity can play an important role in the reversal of the self-polarization direction in epitaxial BiFeO3 thin films. The flexoelectric and interfacial effects compete with each other to determine the self-polarization state. In Region I, the self-polarization is downward because the interfacial effect is more dominant than the flexoelectric effect. In Region II, the self-polarization is upward, because the flexoelectric effect becomes more dominant than the interfacial effect.

摘要

铁电体的自发极化方向可以在外加应力作用下发生反转,在外延 BiFeO3 薄膜中,这种力致铁电体效应可以通过 flexoelectricity 实现。界面效应和 flexoelectricity 效应相互竞争,共同决定了薄膜的自发极化状态。在区域 I 中,界面效应占主导地位,因此薄膜的自发极化向下;在区域 II 中,flexoelectricity 效应占主导地位,因此薄膜的自发极化向上。

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