Han Dedong, Wang Wei, Cai Jian, Wang Liangliang, Ren Yicheng, Wang Yi, Zhang Shengdong
Institute of Microelectronics, Peking University, Beijing 100871, PRC.
J Nanosci Nanotechnol. 2013 Jul;13(7):5154-7. doi: 10.1166/jnn.2013.7505.
We have fabricated flexible thin-film transistors (TFTs) on plastic substrates using Aluminum-doped ZnO (AZO) as an active channel layer at room temperature. The AZO-TFTs showed n-channel device characteristics and operated in enhancement mode. The device shows a threshold voltage of 1.3 V, an on/off ratio of 2.7 x 10(7), a field effect mobility of 21.3 cm2/V x s, a subthreshold swing of 0.23 V/decade, and the off current of less than 10(-12) A at room temperature. Recently, the flexible displays have become a very hot topic. Flexible thin film transistors are key devices for realizing flexible displays. We have investigated AZO-TFT on flexible plastic substrate, and high performance flexible TFTs have been obtained.
我们在室温下于塑料基板上使用铝掺杂氧化锌(AZO)作为有源沟道层制造了柔性薄膜晶体管(TFT)。AZO-TFT表现出n沟道器件特性并以增强模式工作。该器件的阈值电压为1.3V,开/关比为2.7×10⁷,场效应迁移率为21.3cm²/V·s,亚阈值摆幅为0.23V/十倍频程,并且在室温下关态电流小于10⁻¹²A。近来,柔性显示器已成为一个非常热门的话题。柔性薄膜晶体管是实现柔性显示器的关键器件。我们研究了柔性塑料基板上的AZO-TFT,并获得了高性能的柔性TFT。