System to measure accurate temperature dependence of electric conductivity down to 20 K in ultrahigh vacuum.

We have developed the new in situ electrical-conductivity measurement system which can be operated in ultrahigh vacuum (UHV) with accurate temperature measurement down to 20 K. This system is mainly composed of a new sample-holder fixing mechanism, a new movable conductivity-measurement mechanism, a cryostat, and two receptors for sample- and four-probe holders. Sample-holder is pushed strongly against the receptor, which is connected to a cryostat, by using this new sample-holder fixing mechanism to obtain high thermal conductivity. Test pieces on the sample-holders have been cooled down to about 20 K using this fixing mechanism, although they were cooled down to only about 60 K without this mechanism. Four probes are able to be touched to a sample surface using this new movable conductivity-measurement mechanism for measuring electrical conductivity after making film on substrates or obtaining clean surfaces by cleavage, flashing, and so on. Accurate temperature measurement is possible since the sample can be transferred with a thermocouple and∕or diode being attached directly to the sample. A single crystal of Bi-based copper oxide high-Tc superconductor (HTSC) was cleaved in UHV to obtain clean surface, and its superconducting critical temperature has been successfully measured in situ. The importance of in situ measurement of resistance in UHV was demonstrated for this HTSC before and after cesium (Cs) adsorption on its surface. The Tc onset increase and the Tc offset decrease by Cs adsorption were observed.