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一种用于连接氧化物分子束外延生长室和X射线光电子能谱分析系统的超高真空传输机构的设计。

Design of an ultrahigh vacuum transfer mechanism to interconnect an oxide molecular beam epitaxy growth chamber and an x-ray photoemission spectroscopy analysis system.

作者信息

Rutkowski M M, McNicholas K M, Zeng Zhaoquan, Brillson L J

机构信息

Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA.

出版信息

Rev Sci Instrum. 2013 Jun;84(6):065105. doi: 10.1063/1.4804195.

DOI:10.1063/1.4804195
PMID:23822376
Abstract

We designed a mechanism and the accompanying sample holders to transfer between a VEECO 930 oxide molecular beam epitaxy (MBE) and a PHI Versa Probe X-ray photoemission spectroscopy (XPS) chamber within a multiple station growth, processing, and analysis system through ultrahigh vacuum (UHV). The mechanism consists of four parts: (1) a platen compatible with the MBE growth stage, (2) a platen compatible with the XPS analysis stage, (3) a sample coupon that is transferred between the two platens, and (4) the accompanying UHV transfer line. The mechanism offers a robust design that enables transfer back and forth between the growth chamber and the analysis chamber, and yet is flexible enough to allow transfer between standard sample holders for thin film growth and masked sample holders for making electrical contacts and Schottky junctions, all without breaking vacuum. We used this mechanism to transfer a barium strontium titanate thin film into the XPS analysis chamber and performed XPS measurements before and after exposing the sample to the air. After air exposure, a thin overlayer of carbon was found to form and a significant shift (~1 eV) in the core level binding energies was observed.

摘要

我们设计了一种装置及配套的样品架,用于在多工位生长、处理和分析系统中,通过超高真空(UHV)在VEECO 930氧化物分子束外延(MBE)设备和PHI Versa Probe X射线光电子能谱(XPS)腔室之间进行转移。该装置由四个部分组成:(1)与MBE生长台兼容的压板,(2)与XPS分析台兼容的压板,(3)在两个压板之间转移的样品块,以及(4)配套的超高真空传输线。该装置设计坚固,能够在生长腔室和分析腔室之间来回转移,并且足够灵活,允许在用于薄膜生长的标准样品架和用于制作电接触和肖特基结的带掩膜样品架之间进行转移,所有这些操作均无需破坏真空。我们使用该装置将钛酸锶钡薄膜转移到XPS分析腔室中,并在将样品暴露于空气中之前和之后进行了XPS测量。空气暴露后,发现形成了一层薄的碳覆盖层,并且观察到芯能级结合能发生了显著的位移(约1 eV)。

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