Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22903, USA.
Opt Lett. 2013 Aug 1;38(15):2750-3. doi: 10.1364/OL.38.002750.
We report on InP-based p-type/intrinsic/n-type (PIN) photodiodes with a novel strain-compensated type-II InGaAs/GaAsSb quantum well active region. The device has optical response out to 3.0 μm, specific detectivity (D*) of 7.73×10(9) cm Hz(0.5)/W at 290 K for 2.7 μm. These preliminary results show that this novel strain-compensated approach leads to similar performance when compared to a conventional strain-compensated approach.
我们报告了一种基于 InP 的 p 型/本征/n 型（PIN）光电二极管，其具有新型应变补偿型 II 类 InGaAs/GaAsSb 量子阱有源区。该器件的光响应范围可达 3.0 μm，在 290 K 下，对于 2.7 μm 的波长，其特定探测率（D*）为 7.73×10(9) cm Hz(0.5)/W。这些初步结果表明，与传统的应变补偿方法相比，这种新型的应变补偿方法具有相似的性能。
