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用于高速率赝电容的高导电 NiCo₂S₄ 刺猬状纳米结构。

Highly conductive NiCo₂S₄ urchin-like nanostructures for high-rate pseudocapacitors.

机构信息

School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.

出版信息

Nanoscale. 2013 Oct 7;5(19):8879-83. doi: 10.1039/c3nr02958a. Epub 2013 Aug 1.

DOI:10.1039/c3nr02958a
PMID:23903234
Abstract

A 3D highly conductive urchin-like NiCo₂S₄ nanostructure has been successfully prepared using a facile precursor transformation method. Remarkably, the NiCo₂S₄ electroactive material demonstrates superior electrochemical performance with ultrahigh high-rate capacitance, very high specific capacitance, and excellent cycling stability.

摘要

一种 3D 高导电性刺猬状 NiCo₂S₄ 纳米结构已成功通过简便的前驱体转化方法制备。值得注意的是,NiCo₂S₄ 电活性材料表现出优异的电化学性能,具有超高的高倍率电容、非常高的比电容和出色的循环稳定性。

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