Center for Advanced Materials and Energy, Xihua University, Chengdu, Sichuan 610039, People's Republic of China.
Nanotechnology. 2013 Aug 30;24(34):345705. doi: 10.1088/0957-4484/24/34/345705.
In the present work, the effect of aluminum (Al) on the thermoelectric properties of PbTe is studied. Aluminum doped PbTe samples, fabricated by a ball milling and hot pressing, have Seebeck coefficients between -100 and -200 μV K-1 and electrical conductivities of (3.6-18) × 104 S m-1 at room temperature, which means that Al is an effective donor in PbTe. The first principle calculations clearly show an increase of the density of states close to the Fermi level in the conduction band due to Al doping, which averages up the energy and effective mass of electrons, resulting in enhancement of the Seebeck coefficient. The maximum figure-of-merit ZT of 1.2 is reached at 770 K in the Al0.03PbTe sample.
在本工作中，研究了铝（Al）对 PbTe 热电性能的影响。通过球磨和热压制备的掺铝 PbTe 样品在室温下的塞贝克系数在-100 到-200 μV K-1 之间，电导率为（3.6-18）×104 S m-1，这意味着 Al 是 PbTe 中的有效施主。第一性原理计算清楚地表明，由于 Al 掺杂，导带中接近费米能级的态密度增加，这平均了电子的能量和有效质量，导致塞贝克系数增强。在 Al0.03PbTe 样品中，在 770 K 时达到了最大品质因数 ZT 值为 1.2。
