Department of Materials Science and Engineering, Seoul National University, Gwanak-gu, Seoul, 151-742, Korea.
Adv Mater. 2013 Sep 25;25(36):5098-103. doi: 10.1002/adma.201302511. Epub 2013 Aug 2.
A two-terminal memristor memory based on a single VO2 nanowire is reported that can not only provide switchable resistances in a large range of about four orders of magnitude but can also maintain the resistances by a low bias voltage. The phase transition of the single VO2 nanowire was driven by the bias voltage of 0.34 V without using any heat source. The memristive behavior of the single VO2 nanowire was confirmed by observing the switching and non-volatile properties of resistances when voltage pulses and low bias voltage were applied, respectively. Furthermore, multiple retainable resistances in a large range of about four orders of magnitude can be utilized by controlling the number and the amount of voltage pulses under the low bias voltage. This is a key step towards the development of new low-power and two-terminal memory devices for next-generation non-volatile memories.
基于单个 VO2 纳米线的两端忆阻器存储器被报道，它不仅可以提供约四个数量级的大范围的可切换电阻，而且可以通过低偏置电压来保持电阻。单个 VO2 纳米线的相变是通过在没有使用任何热源的情况下施加 0.34 V 的偏置电压来驱动的。通过观察施加电压脉冲和低偏置电压时电阻的开关和非易失性特性，证实了单个 VO2 纳米线的忆阻行为。此外，通过在低偏置电压下控制电压脉冲的数量和幅度，可以利用约四个数量级的大范围的多个可保留电阻。这是朝着开发用于下一代非易失性存储器的新型低功耗和两端存储器设备迈出的关键一步。
