Zhang Yanqing, Xiong Weiming, Chen Weijin, Luo Xin, Zhang Xiaoyue, Zheng Yue
State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China.
Phys Chem Chem Phys. 2020 Feb 28;22(8):4685-4691. doi: 10.1039/c9cp06428a. Epub 2020 Feb 14.
We fabricate a ferroelectric field effect transistor (FeFET) based on a semiconducting vanadium dioxide (VO) nanowire (NW), and we investigate its electron transport characteristics modulated by the ferroelectric effects. The transistor consists of a single VO NW as the channel and a ferroelectric Pb(ZrTi)O (PZT) thin film as the dielectric gate. The conductance of the VO NW channel is found to be feasibly modulated by the ferroelectric gate with an 85% resistance change under the gate voltage of 18 V (at an applied field of about 0.75 MV cm). The electron transport property of the device can be controlled by the remnant polarization of the PZT layer due to the nonvolatile property of the ferroelectric gate, with an off-field change of channel resistance up to 50%. Moreover, multiple resistive states can be achieved by sweeping gate voltage across the device appropriately. These results demonstrate that ferroelectric gate modulation is an efficient tool to regulate the electron transport properties of the VO NW, and the VO-NW-FeFET has potential applications in nonvolatile and low-power consumption devices.
我们基于半导体二氧化钒（VO）纳米线（NW）制造了一种铁电场效应晶体管（FeFET），并研究了其受铁电效应调制的电子输运特性。该晶体管由一根VO NW作为沟道和一层铁电锆钛酸铅（PZT）薄膜作为介质栅极组成。发现在18 V的栅极电压下（在约0.75 MV/cm的外加电场下），VO NW沟道的电导可通过铁电栅极进行有效调制，电阻变化达85%。由于铁电栅极的非易失性，该器件的电子输运特性可由PZT层的剩余极化控制，沟道电阻的场致变化高达50%。此外，通过适当地扫描器件上的栅极电压可实现多个电阻状态。这些结果表明，铁电栅极调制是调节VO NW电子输运特性的有效工具，VO-NW-FeFET在非易失性和低功耗器件中具有潜在应用。
