发光二极管器件中 InGaN/GaN 多量子阱的组成波动和阱宽波动。

Composition fluctuation of in and well-width fluctuation in InGaN/GaN multiple quantum wells in light-emitting diode devices.

机构信息

Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, South Korea.

出版信息

Microsc Microanal. 2013 Aug;19 Suppl 5:99-104. doi: 10.1017/S1431927613012427.

DOI:10.1017/S1431927613012427

PMID:23920184

Abstract

In this paper, we have observed an atomic-scale structure and compositional variation at the interface of the InGaN/GaN multi-quantum wells (MQW) by both scanning transmission electron microscopy (STEM) using high-angle annular dark-field mode and atom probe tomography (APT). The iso-concentration analysis of APT results revealed that the roughness of InGaN/GaN interface increased as the MQW layers were filled up, and that the upper interface of MQW (GaN/InGaN to the p-GaN side) was much rougher than that of the lower interface (InGaN/GaN tot he n-GaN side). On the basis of experimental results, it is suggested that the formation of interface roughness can affect the quantum efficiency of InGaN-based light-emitting diodes.

摘要

在本论文中，我们通过高角度环形暗场扫描透射电子显微镜（STEM）和原子探针层析技术（APT）观察到了 InGaN/GaN 多量子阱（MQW）界面的原子尺度结构和组成变化。APT 结果的等浓度分析表明，随着 MQW 层的填充，InGaN/GaN 界面的粗糙度增加，并且 MQW 的上界面（p-GaN 侧的 GaN/InGaN）比下界面（n-GaN 侧的 InGaN/GaN）粗糙得多。基于实验结果，我们认为界面粗糙度的形成会影响基于 InGaN 的发光二极管的量子效率。