Lee Kwang Jae, Kim Sang-Jo, Kim Jae-Joon, Hwang Kyungwook, Kim Sung-Tae, Park Seong-Ju
Opt Express. 2014 Jun 30;22 Suppl 4:A1164-73. doi: 10.1364/OE.22.0A1164.
We demonstrate the high efficiency of InGaN/GaN multiple quantum wells (MQWs) light-emitting diode (LED) grown on the electrochemically etched nanoporous (NP) GaN. The photoluminescence (PL) and Raman spectra show that the LEDs with NP GaN have a strong carrier localization effect resulting from the relaxed strain and reduced defect density in MQWs. Also, the finite-difference time-domain (FDTD) simulation shows that the light extraction efficiency (LEE) is increased by light scattering effect by nanopores. The output power of LED with NP GaN is increased up to 123.1% at 20 mA, compared to that of LED without NP GaN. The outstanding performance of LEDs with NP GaN is attributed to the increased internal quantum efficiency (IQE) by the carrier localization in the indium-rich clusters, low defect density in MQWs, and increased LEE owing to the light scattering in NP GaN.
我们展示了在电化学蚀刻的纳米多孔（NP）氮化镓上生长的氮化铟镓/氮化镓多量子阱（MQW）发光二极管（LED）的高效率。光致发光（PL）和拉曼光谱表明，具有NP氮化镓的LED具有很强的载流子局域化效应，这是由MQW中弛豫应变和降低的缺陷密度导致的。此外，时域有限差分（FDTD）模拟表明，纳米孔的光散射效应提高了光提取效率（LEE）。与没有NP氮化镓的LED相比，具有NP氮化镓的LED在20 mA时的输出功率提高了123.1%。具有NP氮化镓的LED的出色性能归因于富铟团簇中的载流子局域化提高了内量子效率（IQE）、MQW中的低缺陷密度以及NP氮化镓中的光散射导致的LEE增加。
